| PART |
Description |
Maker |
| APT11GP60K APT11GP60SA |
MOSFET
POWER MOS 7 IGBT
41 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
Advanced Power Technolo...
Advanced Power Technology
MICROSEMI POWER PRODUCTS GROUP
|
| APT40GP60J |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT50GP60S |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT15GP60BDF1 |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology Ltd.
|
| APT75GP120B2 |
MOSFET
POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
| APT80GP60J |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT45GP120JDQ2 |
75 A, 1200 V, N-CHANNEL IGBT
POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| SPP04N60S5 |
Cool MOS Power Transistor(MOS 型功率晶体管) 4.5 A, 600 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
|
| APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
|
| APT10050B2VFR APT10050LVFR |
21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V 1000V 21A 0.500 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
| APT65GP60L2DQ2 APT65GP60L2DQ2G |
POWER MOS 7 IGBT
|
http://
Advanced Power Technology
|
